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1·And with a good breakdown performance, MESFET can be widely used in high-voltage field.

具有较好的击穿特性会使其更广泛地应用于高压领域。

2·This method can effectively evaluate the quality of MESFET before the microwave characteristics of devices are measured.

该法可在MESFET进行微波噪声性能测试之前，有效地鉴别器件质量的优劣。

3·This paper discusses a switching model of GaAs MESFET. It is suitable for MMIC design with broad frequency characteristic.

提出了一种MESFET开关的模型——附加栅控开关模型，适用于MMIC电路的设计，具有很好的宽带微波特性。

4·We propose a unified time scale algorithm for thermal effect of MESFET under irradiation of high power electromagnetic pulses.

提出高功率电磁脉冲作用下MESFET热效应分析的时间尺度统一算法。

5·Finally, a sequential procedure is presented to design the microwave integrated MESFET amplifiers with low sensitive characteristics, and an exa...

最后介绍一种具有低灵敏度特性的微波集成MESFET放大器的设计方法，并给出了算例。

6·Finally, a Dual-channel MESFET is proposed, and the channel parameters are optimized with simulation results of the DC output and breakdown results.

最后，模拟研究了“双沟道”MESFET结构，并根据模拟仿真的直流输出特性以及击穿特性，优化了“低沟道”层和“高沟道”层的结构参数。

7·In order to analyze the nonlinear characteristic presented in the subharmonic load pull experiment theoretically, a class a MESFET power amplifier is researched on in this paper.

为了从理论上解释副谐波负载牵引实验中的各种非线性现象，对一个A类MESFET功放进行了研究。