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1·Switching time of the new-type transistor is shortened 3 times.

新型晶体管的开关时间缩短了2/3（即缩短到1/3）。

2·Estimation of RTD switching time by negative resista nce value.

用负阻值估算开关时间。

3·The lifetime of C60 (3T1) can be deduced from the switching time.

由光开关时间推断出C_（60）分子三重态的寿命。

4·The switching time of the new-type transistor is shortened three times.

新型晶体管的开头时间缩短为三分之一。

5·The switching time of the new-type transistor is shortened three times .

新型晶体管的开关时间缩短了三分之二。

6·As can be seen in Figure 4, the image becomes corrupted during the switching time.

如图4所示，切换期间的图像发生损坏。

7·SEM pictures and switching time measurements were taken to understand the dramatic effect.

为了了解这个引人注目的效应，我们拍摄了SEM图像并测量了开关时间。

8·Features: Low saturation voltage, excellent dependence of hFE on current, fast switching time.

特点：低饱和压降，电流放大线性好，开关速度快。

9·The single most important parameter in the design of a ferrite memory is the core switching time.

在铁素体存贮器设计中，一个重要的参数是磁芯翻转时间。

10·The exact measurement on switching time provides reference for optical switches using in different field.

准确测量光开关的转换时间为其应用在不同领域提供了参考。