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1·The concepts described above are embodied in the junction transistor.

上述各种概念都反映在结型晶体管中。

2·A bipolar junction transistor relates to the technical field of a semiconductor power device.

双极结型晶体管，涉及半导体功率器件技术领域。

3·Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.

半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。

4·Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.

无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。

5·There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.

有两个限制了晶体管的处理能力，功耗：平均交界处的温度和二次击穿。

6·Transistor thermal spectrum, as a new method, different from the commonly infrared thermogram, is introduced to characterize the non-uniform property of the junction temperature distribution.

晶体管热谱是表示晶体管结温不均匀性的一种与热像图不同的新方法。

7·In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.

为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。

8·The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.

新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。

9·A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.

为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。

10·If the tunnel junction capacitance becomes larger, the amplitude of the I-V curve of single-electron transistor becomes smaller, but the period is unchanged.

同时，单电子三极管I-V曲线的振幅随着隧道结电容的增大而减小，但I-V曲线的周期保持不变。