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1·The second diode unit is configured to present no forward bias during normal operation of the apparatus.

所述第二二极管单元经配置以在所述设备的正常操作期间不呈现正向偏置。

2·With sufficient forward bias, the diffusion capacitance can easily exceed the space charge region capacitance.

当正向偏压足够高时，扩散电容很容易超过空间电荷压电容。

3·This paper illustrates the physical essence transferred for the Collector Junction from reverse bias to forward bias.

本文简述了晶体管作开关运用时集电结由反偏状态向正偏状态转化的物理本质。

4·The forward bias offset PID control algorithm improved the second segment concentration control response speed and reduced control overshoot;

带偏置补偿PID控制回路提高了二段浓度控制的响应速度，并减少了控制超调；

5·The 1n3595 diode is a good choice for this function because it has low leakage current, typically less than 1pa, even with a forward bias of 1mv.

二极管1n3595是完成此功能的很好的选择对象，因为其漏电流很低，即使在正向偏置电压为1 mV时，漏电流典型值也小于1pa。

6·The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer .

位移电流的机理只对反向偏压或要维持空间电荷层所需要的非常弱的正向偏压条件下的电容器才有用。

7·The leakage of the 1n3595 diode is generally less than one picoampere even with 1mv of forward bias, so the circuit won't interfere with measurements of 10pa or more.

即使在1 mV的正向偏置之下，1n3595的漏电流一般会小于1皮安，此电路不会影响10pa或更大电流的测量。

8·Based on the thermionic emission theory of the current density of4h-sic schottky barrier diodes under the forward bias the calculations for the schottky barrier height?

在分析4hsic肖特基势垒二极管正向电流热电子发射理论的基础上，计算了肖特基势垒高度？

9·By controlling the detecting time, it is found that the light intensity is varied with the detection time, and also varied with the forward bias voltage in the same detection time.

控制光探测器的探测时间，发现不同探测时间下电池的发光强度不同，探测时间相同但偏压不同则光强也不同。

10·It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.

通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。