schottky是什么意思_schottky的用法_例句

单词 schottky

音标英音[ 'ʃɒtkɪ ] 美音[ 'ʃɑtkɪ ]

释义

n. （Schottky）（美、荷）肖特基（人名）

时间: 2026-02-07 08:09:11

schottky 双语例句

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1·One type is the schottky defect in ionic crystals.

在离子晶体中有一类是斯考特库缺陷。

2·Schottky gate resonant tunneling transistor (SGRTT) is fabricated.

通过流片，制作出肖特基栅共振隧穿三极管(SGRTT)。

3·Schottky barrier diodes with different metal on III nitride have been fabricated.

研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。

4·Schottky rectifier series has been optimized for low reverse leakage at high temperature.

这个中心自来水肖特基整流器系列一直很低，高温反向漏优化。

5·Series resistance is an important factor confining the response speed of Schottky barrier diode.

串连电阻是制约肖特基二极管响应速度的一个关键因素。

6·This method is more exact than Schottky Barrier method by avoiding influence of back conductive current.

此法由于没有反向传导电流的影响，所以，比利用肖特基势垒方法要精确些；

7·This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature.

这个中心自来水肖特基整流器系列一直很低，高温反向漏优化。

8·Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.

肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。

9·Other features include integrated Schottky diodes, accurate LED current matching and multiple output capability.

其它功能包括集成肖特基二极管、精确的 LED 电流匹配以及多输出能力。

10·Schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 8.0 a.

肖特基势垒整流器。最大重复峰值反向电压50 V最大平均正向整流电流8.0 A。

肖特基

1·This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature.

这个中心自来水肖特基整流器系列一直很低，高温反向漏优化。

2·Applying the synchronous rectifier technology in which MOSFET replaces common diodes or schottky diodes can increase the efficiency of low-voltage, great-current transformer.

采用功率MOSFET取代普通二极管或肖特基二极管的同步整流技术，可以使低压大电流变换器的效率得到极大的提高。

3·Finally, wire bonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。

4·The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.

包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。

5·In this paper, some new multiple diode, such as varicap diode, switching diode, diode array, damper diode, modulation diode and Schottky diode are discussed.

本文介绍了几种新型复合二极管，包括变容二极管、开关二极管、二极管阵列、阻尼二极管、调制二极管和肖特基二极管等。