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1·The concept of full photonic bandgap was explained.

阐述了完全光子禁带的概念。

2·A PMC structure with a complete photonic bandgap has been designed.

设计出了具有完全光子禁带的PMC结构。

3·Silicon is an indirect bandgap semiconductor emitting light inefficiently.

硅是间接带隙半导体，不能有效地发光。

4·In this paper, ANNs are applied to study of the bandgap characteristic of DGS.

本文针对神经网络在DGS滤波特性中的应用进行了研究。

5·A novel exponential curvature-compensated bandgap reference circuit is presented.

提出了一种新型的指数曲率补偿带隙基准源电路。

6·Therefore, we get the bandgap reference voltage with very small temperature coefficient.

由此得到温度系数很小的带隙基准电压。

7·The ribbons are narrow enough to have an electronic bandgap and thus switching properties.

这种带足够窄以至于形成电学带隙，从而拥有开关性能。

8·It is believed that the emission peaks were concerned with impurity level in the bandgap.

变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。

9·The start-up circuit was design for the bandgap voltage reference circuit working normally.

另外设计了启动电路以确保基准电路能正常工作。

10·The Electromagnetic bandgap(EBG)is a periodic structure with obvious bandstop characteristic.

电磁带隙结构（EBG）是一种周期性结构，具有明显的带阻特性。