全部

1·Optimizing dopant diffusion processes.

如何优化掺杂扩散制程。

2·The silicon carbon layer is exposed to a dopant.

将硅碳层暴露给掺 杂物。

3·Uses: As an activator of phosphor and dopant of garnet.

用途：用于荧光粉的活化剂和柘榴石的添加剂。

4·The implanted dopant has a first dopant profile in the silicon layer.

所注入的掺杂剂在硅层中具有第一掺杂剂分布。

5·The dopant blocking superlattice may include a plurality of stacked groups of layers.

该掺杂剂阻挡超晶格可以包括多个层叠的层组。

6·The results showed: the sintering was improved because of the presence of the dopant .

结果表明：由于掺杂组分的存在，烧结情况得到了明显的改进。

7·The nano-dopant obtained by water-based sol-gel method was well dispersive and active.

通过水基溶胶-凝胶法合成了粉体颗粒均匀、高分散性、高活性的纳米掺杂剂。

8·The spread uniformity of the dopant in the film surface will vary with the doping time.

又掺杂剂在膜表面分布均匀程度与掺杂时间有关。

9·In Part I, we want to clarify the possible mechanism that active the dopant at low temperature.

第一部分，我们想研究低温活化的可能机制。

10·The formation of oxygen precipitates not only had relation to point defects, but also the dopant atoms.

氧沉淀的形成与硅片中点缺陷、掺杂原子有密切关系。

掺杂剂

1·It could be possible to make superconductor-based circuits simply by using a beam of X-rays to control the positions of dopant atoms within a suitable material.

在合适的材料中，使用X射线来控制掺杂剂原子的状态，用这种方法将使制作超导电路成为可能。

2·Dopant influence some properties of polyaniline such as configuration, heat stability, infrared emittance, microwave absorbing.

掺杂剂性质影响聚苯胺的结构、热稳定性、红外发射率、微波吸收等性能。

3·After introducing dopant and defect into the graphene, the interaction between graphene and small molecules could be strengthened.

当在石墨烯表面引入掺杂剂和缺陷后，其与气体分子之间的相互作用被明显地增强。

4·The dopant blocking superlattice may include a plurality of stacked groups of layers.

该掺杂剂阻挡超晶格可以包括多个层叠的层组。

5·Additional contributions to the refractive index are expected to come from the dopant(6. 8)as well as from the electro-optic effect.

预料其它对折射率的影响来自掺杂剂以及电光效应。

杂物

1·Municipality park resolute decision, tore down dopant house, make these bodies resided the heavy Huan sparkle ofbaby of humble room.

市园林处果断决定，拆除杂物房，让这些身居“陋室”的“宝贝”重焕光彩。

搀杂剂

1·The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms.

现代半导体集成电路的制造往往要求涉及大电流低能量带电搀杂剂原子的注入步骤。