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1·Low noise, Low distortion, Low threshold current.

低噪声，低失真，低阈值电流。

2·Modify quantum well structure can decrease threshold current and increase power.

重点设计了量子阱结构来降低阈值电流，提高输出光功率。

3·BIAS_APC function can set bias current of ld automatically by estimating threshold current of ld.

BIAS_APC功能可以设置偏置电流通过估计阈值的自动ld LD的电流。

4·The linear dependences of the threshold current and the maximum current on DC clearing ion voltage are also presented.

提出了适于此类清洗电极的直流清除离子电压与积累束流阈值流强、最高流强的线性关系。

5·It is found that optimization of the structure parameters of ridge waveguide (RWG) can decrease the threshold current of RWG laser diode.

通过优化脊形波导的结构参数可以降低脊形波导激光器的阈值电流，提出了实现亚微米脊宽，从而降低阈值电流的方法。

6·The mode and the threshold current characteristics of planar stripe geometry DH lasers can be analyzed by two-dimensional waveguide model.

平面条形双异质结激光器的模式和阈值电流特性可以用两维波导模型来分析。

7·Experimental results: 1 Increased well number has improved the temperature characteristics of threshold current and external differential efficiency.

透明电流密度的特征温度又取决于辐射复合效率，外部微分效率的特征温度取决于高温下导带电子的泄漏。

8·Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe.

进一步分析认为，这是因为条宽变窄导致器件阈值电流密度、阈值载流子密度变大造成的。

9·The effects of device temperature on the laser threshold current, external differential quantum efficiency (DQE), and output wavelength are also investigated.

研究了器件温度对于激光阈值电流、外微分量子效率和输出波长的影响。

10·The effects of DBR reflectivity and well Numbers on threshold current and output power of bottom-emitting VCSELs were analyzed to design an optimal device structure.

分析了腔镜反射率、量子阱数等参数对阈值电流、输出光功率的影响，并根据理论计算对器件参数进行了优化设计。