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1·The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.

以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。

2·The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.

结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。

3·Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.

给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。

4·JFET resistance, accumulation resistance, channel resistance and drift region resistance is the most important components of on-resistance.

JFET区电阻、沟道电阻、积累层电阻和漂移区电阻是导通电阻的四个最主要的组成部分。

5·The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.

但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。

6·The results show that for the double-reentrant cavity with regular drift region, this method is superior to the others in higher accuracy and less computing time.

结果表明对于漂移咀规则的重入腔，采用分区场匹配的经典方法仍有明显的优点，它既可以保证很高的精度，又只需要很少的计算量。

7·In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.

为了获得SOI - LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧soi - LDMOS高压器件新结构。

8·The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.

首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。

9·During SST raise stage in the equatorial central and eastern Pacific and North Pacific westerly drift region, serious droughts and floods easily happen in the North China Plane, respectively.

在赤道中东太平洋海温与北太平洋西风漂流区海温处于明显正距平阶段 ，华北平原地区易分别发生严重干旱与雨涝。

10·This region marks where heat rising from the leading edge of the plume is pushing rock up, as tectonic forces cause the plume to drift eastward.

这个区域标志来自火山柱主要边缘的热度正在把岩石往上拱，如构造作用力导致火山柱向东方漂移。