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1·The positive photoresist composition which is suitable for used in a resist coating method by a discharge nozzle system can be provided according to the invention.

根据本发明可提供能够适用于排出喷嘴式的抗蚀剂涂布法的正型光致抗蚀剂组合物。

2·We can better control the positive photoresist figure, provide a reference for making MEMS and MOEMS, it is of an important instructional significance for deep relief of micro structure.

通过对光刻工艺过程的研究，可为较好地控制正性光刻胶面形，制作微机械、微光学器件提供了参考依据，对微浮雕结构的深刻蚀具有重要的指导意义。

3·The mechanisms of dissolution inhibition of positive photoresist based on novolak(NVK)-diazonaphthoquinone(DNQ), including(1) the molecular hydrogen bonding interactions between novolak and DNQ;

本文综述了酚醛重氮萘醌正性抗蚀剂的溶解抑制机理，主要包括（1）分子间氢键作用机理；

4·Image reversal of S - 1400 series photoresist from positive to negative has been realized by added proper imidazole in it.

本文阐术了在S-1400正胶中加入适量咪唑，使正胶不仅具有原来特性，而且经一定工艺处理后还具有负胶的功能。

5·The photo-oxidation reaction of poly (styrene-sulfone)-a novel positive deep UV photoresist including film and solution has been studied by fluorescence spectra.

利用荧光光谱研究了聚苯乙烯砜正性远紫外抗蚀剂薄膜和溶液的光氧化反应。