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1·The depletion mode portion is gated by the second gate, and has been modified to operate in depletion mode and that is operative to shield the first gate from voltage stress.

该耗尽模式部分由该第二栅极栅控，并且适于工作于耗尽模式且可屏蔽该第一栅极免受电压负荷影响。

2·Analyzing the parameters of the depletion-mode HV-NLDMOS used in a LED driver IC, the structure of DM-NLDMOS and optimal design method of its parameters were proposed.

基于一款LED驱动芯片中耗尽型高压NLDMOS器件的参数要求，提出一种耗尽型高压NLDMOS的器件结构和参数设计优化方法。