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1·It has advantages of sample structure, low damage and anisotropic etching.

该装置具有结构简单，低损伤和各向异性刻蚀的优点。

2·This paper has Studied anisotropic etching mechanism of St in KOH scution by using collision theory.

本文应用碰撞理论研究了硅在KOH溶液中各向异性腐蚀的机理。

3·This paper introduces the computer simulation for the anisotropic etching used in micro-machining of sensors.

本文介绍传感器微机械加工中使用的各向异性腐蚀的计算机模拟。

4·The size of the parallelogram is analyzed and designed according to anisotropic etching properties of silicon.

依据硅的各向异性腐蚀特性对平行四边形蚀坑尺寸进行了分析设计。

5·Two mutually vertical fibers coupling grooves are fabricated by using anisotropic etching of the(110) silicon in the KOH solution.

利用（110）硅片在KOH溶液中各向异性腐蚀制作出两个互相垂直的光纤定位槽。

6·This blade has an edge as the higher order face of the crystal anisotropic etching and the edge inclines at a sharp angle to the polished face as described above.

该刀片具 有作为结晶各向异性蚀刻的高次面的刃口，该刃口相对于上述研磨面 以锐利的角度倾斜。

7·When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.

在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。

8·During fabrication of the NEMS probes, KOH anisotropic etching technology has been developed for the formation of suitable silicon island with top size within 0.5 to 0.8m.

在器件制造的过程中，采用KOH各向异性腐蚀硅尖技术制造出了顶部尺寸在0.5～0.8微米范围内符合要求的硅岛；

9·Application of TMAH solutions which is used as etchant in boron etch-stop and anisotropic etching process in the manufacturing of single-crystal and polysilicon pressure sensors is mainly discussed.

介绍了四甲基氢氧化铵(TMAH)溶液的腐蚀特性，论述了在单晶硅和多晶硅高温压力传感器的制作过程中，TMAH腐蚀液在浓硼终止腐蚀和各向异性硅杯腐蚀两个制作工艺中的应用。

10·A technique for the fabrication of silicon cone cathode array by using anisotropic and isotropic etching has been reported in this paper.

详细研究了利用硅的各向异性腐蚀、各向同性腐蚀制备硅锥阴极阵列的工艺。