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1·The polysilicon tiles (14.1, 14.2) have silicide layers (50.1, 50.2).

所述多晶硅瓦片（14.1、14.2） 具有硅化物层（50.1、50.2）。

2·We have a production line of organic chloride, silicide, nitride compounds and etc.

目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。

3·The invention discloses a preparation method of magnesium silicide and a device thereof.

本发明公开了一种硅化镁的制备方法与装置。

4·The effect of oxygen impurity on silicide formation has been observed. Finally, the mecha…

观察到氧杂质对形成条件的影响，简单讨论了离子束混合形成硅化物的机理。

5·Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.

其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。

6·The metal silicide layer prepared by the method has high heat stability and controllable growth speed.

本发明方法制备的金属硅化物层热稳定性高，且生长速度可控。

7·The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.

半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。

8·The typical growth condition is also determined. The composition of titanium silicide films is analysed…

还确定了典型工艺条件，并用俄歇电子能谱分析了硅化钛膜的组分。

9·The precipitation of silicide may promote the intensity of slip and is the minor reason for the ductility loss.

而硅化物析出协同促进位错滑移集中化，是热稳定性下降的次要因素。

10·The effect of oxygen impurity on silicide formation has been observed. Finally, the mechanism on the formation of…

观察到氧杂质对形成条件的影响，简单讨论了离子束混合形成硅化物的机理。

硅化物

1·The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.

本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。

2·The metal silicide layer prepared by the method has high heat stability and controllable growth speed.

本发明方法制备的金属硅化物层热稳定性高，且生长速度可控。

3·Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.

其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。

4·Carbene and silylene are two kinds of reactive activity intermediates which belong to carbide and silicide separately, but they are quite similar.

碳烯和硅烯是分属于碳化物和硅化物中的两类反应活性中间体。两者甚为相似。

5·The polysilicon tiles (14.1, 14.2) have silicide layers (50.1, 50.2).

所述多晶硅瓦片（14.1、14.2） 具有硅化物层（50.1、50.2）。