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1·Deep ion implantation modulates punch -through voltage.

深离子注入调整源漏穿通电压。

2·Helium ion was implanted by plasma immersion ion implantation technology.

氦离子用等离子体浸没离子注入技术注入硅片中。

3·Finally, the surface strengthening mechanism by double ion implantation is discussed.

还讨论了双注入金属表面的硬化机理。

4·In this paper, a glow discharge plasma source ion implantation technique is described.

本文叙述了辉光放电等离子体源的等离子体源离子注入。

5·The effect of titanium ion implantation dosage on the corrosion behaviors was discussed.

讨论了钛离子注入剂量对铅及铅-锑合金耐蚀能力的影响。

6·The ion implantation technology is used for a good uniformity of the circuit performance.

用离子注入技术保证电路具有较好的一致世。

7·The present situations of applying ion implantation technique in metallic materials are reviewed.

本文评述了在金属材料领域中应用离子注入技术的现状；

8·Temperature rise of implanted samples have direct influences on properties of ion implantation layer.

注入样品的温升对离子注入层的性能有直接影响。

9·Fabrication and research of calibration samples for boron ion implantation into silicon are discussed.

本文主要介绍了硅中硼离子注入校准样品的制备与研究。

10·By using the multiple ion implantation technique, novel CMOS quaternary decoder and encoder are designed.

利用多级离子注入技术，一种新型的CMOS四值译码器与编码器被设计。