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1·According to the present invention, defects of traditional wafer bonding process can be avoided.

本发明可避免传统晶片粘合工艺的缺点。

2·A perforated metal wafer carrier is also used for wafer bonding for easy handling and de-bonding.

穿孔金属晶片载体也用于晶片键合，用以容易地处理以及松解。

3·Three typical manifestations of wafer bonding strength were introduced as tensile strength, shear strength and adhesive strength.

介绍了三种典型的圆片键合强度表现形式：抗拉强度、剪切强度和粘接强度。

4·Direct wafer bonding is a new process of material integrating and has received tremendous attention in the research of optoelectronics and microelectronics field.

摘要晶片直接键合技术是材料集成的一项新工艺，是近年来集成光电子领域的研究热点之一。

5·Direct wafer bonding is a new process of material integrating and has received tremendous attention in the research of optoelectronics and microelectronics field.

晶片直接键合技术是材料集成的一项新工艺，是近年来集成光电子领域的研究热点之一。

6·Introduces wafer bonding process, technical requirements, application choice and Interaction for MEMS, and showing MEMS fabrication technology and application prospects.

介绍了晶圆键合工艺、技术要求、应用选择以及对MEMS的作用；展示了MEMS制造技术和应用前景。

7·Wafer pairs with bonding interface being native oxide or thermal oxide have different bonding behavior in the annealing process, which were investigated and compared.

将硅本征氧化层与硅热氧化层两种键合界面在退火过程中的行为进行了理论分析与比较。

8·The process of low temperature wafer direct bonding using wet chemical surface activation methods are discussed.

探讨了使用湿化学法对硅片表面进行活化，完成硅圆片低温直接键合的流程。

9·As one of the newly-emerged enabling technologies, wafer direct bonding has been playing key roles in more and more fields.

作为半导体制造领域的一项新兴的使能技术，晶圆直接键合已经在越来越多的领域发挥了重要的作用。

10·Through the silicon bonding, we achieve a wafer-level vacuum package, and the wire-bonding PAD is made after the fabrication is complete.

在完成整体结构圆片级真空封装的同时，通过引线腔结构方便地实现了中间电极的引线。