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1·The principle and the main parameters of the dry etching for silicon dioxide are introduced.

阐述了二氧化硅干法蚀刻的原理和主要的蚀刻参数。

2·Dry etching technique of silicon is a very important process in the modern semiconductor industry.

对硅的干法刻蚀技术是现代半导体工业中非常重要的一项工艺。

3·Surface micromachining USES select materials and both wet and dry etching processes to form the circuitry layers.

表面微机械加工使用选择的材料和干法和湿法蚀刻工艺以形成电路层。

4·The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride.

这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。

5·The latest advance of the dry etching for submicron fabrication in ULSI production and interrelated technology are introduced.

综述了亚微米、深亚微米干法刻蚀和相关技术的最新进展及其在超大规模集成电路制造中的应用。

6·This low-viscosity photocurable resin composition has excellent dry etching resistance and is applicable to optical nanoprinting.

该 树脂组合物是可以用于光纳米印制的低粘度而干蚀刻性优异的光固化 性树脂。

7·Mechanism of dry etching damage and main causes for RIE induced - damage are investigated with RIE technique by utilizing PIN photodiodes.

采用rie法，利用PIN光电二极管，研究了干法腐蚀损伤机理及引起损伤的主要因素。

8·Photoluminescence (PL) measurements show that, the photoluminescence intensity of the quantum Wells is enhanced about 3 times after dry etching.

通过光致发光(PL)特性表征发现，干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍。

9·The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).

利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。

10·The fabrication methods of MPC include electron beam lithography with subsequent evaporation and lift-off, interference lithography with dry-etching technology etc.

制备金属光子晶体方法包括：电子束刻蚀结合后续剥离法、激光干涉光刻结合干刻蚀技术等。