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1·Electrode contact hole USES heavily doped for reducing contact conduction loss.

电极接触孔处采用重掺杂，减小接触电导损失。

2·The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.

研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。

3·It is found that pore's depth and diameter on n-InP with heavily doped concentration is larger than moderately doped samples.

本文通过对不同掺杂浓度的样品进行刻蚀，发现重掺杂的样品刻蚀出的孔在深度和孔径上都比中度掺杂的大。

4·Heavily doped zinc GaSb alloy was used as dopant to reduce the zinc volatile loss and control the concentrations of zinc more easily.

采用重掺锌母合金作掺杂剂，可减少锌的损失，较好地控制掺杂浓度。

5·Because the quantitative analysis of oxygen can't be done by general equipment, it is still lack of systematically investigation of precipitates and induced defects in heavily doped Cz-si.

但由于重掺硅中氧浓度定量测试受到方法限制，重掺硅单晶氧沉淀及其诱生缺陷至今未得到全面而深入地研究。

6·They had doped (up) the patient heavily before the operation.

他们在手术前已给病人深度麻醉。

7·Whereas the formation of oxygen precipitates was retarded due to the reaction of the As atoms and the vacancies in heavily As-doped wafer.

在重掺砷硅片中，由于砷原子和空位相互作用，导致氧沉淀受到抑制。

8·A developed IG technique was suggested and the mechanism of the influence of As on oxygen precipitation formation in heavily As-doped silicon was discussed.

探索出一种改进的内吸除技术，并探讨了其增强重掺硅片中氧沉淀的机理。

9·The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.

研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。