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1·The invention improves puncture voltage characteristic of the semiconductor device, in addition, collision ionization in the semiconductor device can be avoided.

本发明改善了半导体器件的击穿电压特性，此外，在本发明的半导体器件中可以避免碰撞电离现象的发生。

2·On the basis of primary factors influencing puncture of mediums, the capacity performance index of voltage resisting and puncture test is emphatically pointed out.

根据影响绝缘材料击穿的主要因素，着重阐述了交流耐压击穿装置的容量指标问题。

3·On the basis of primary factors influencing puncture of mediums, this paper emphatically points out the capacity performance index of voltage-resisting of puncture tester.

根据影响介质击穿的主要因素，着重阐述了交流击穿耐压装置的容量指标问题。