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1·The integration technologies of RTD with HEMT, HBT and CMOS devices are first introduced.

首先对RTD与化合物半导体HEMT, HBT以及硅cmos器件的集成工艺进行了介绍。

2·At last, the effect of rapid thermal annealing on the electrical properties of HEMT material is studied.

最后我们研究了快速退火对HEMT材料电学性能的影响。

3·This experiment lays a foundation for the optimization of RTT and RTD HEMT monolithic integration circuit development.

实验为RTD/HEMT串联型RTT性能的优化和RTD/HEMT单片集成电路的研制奠定了基础。

4·A comprehensive analysis concerning the calculations of DC Characteristics, microwave and noise parameters of HEMT is given.

本文全面分析计算了HEMT器件的直流特性、微波和噪声参量。

5·Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。

6·A high performance Q-band monolithic HEMT transceiver chipset has been developed for millimeter-wave commercial digital radio systems.

一种高性能的Q波段单片HEMT收发芯片已改进用于毫米波商用数字无线电系统。

7·Using this model, the parameters of HEMT such as channel conductance, transconductance, gate capacitance, and cut-off frequency are derived.

由本文模型还推导出了HEMT沟道电导、跨导、栅电容和截止频率等微波参数表达式。

8·This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.

本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。

9·Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.

富士通公司指出使用氮化镓高电子迁移率晶体管技术后，新型放大器功率比目前使用砷化镓晶体管的放大器的功率提高了6倍多。

10·High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.

高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。