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1·What was known as avalanche breakdown occurred.

通常所谓的雪崩式击穿现象爆发了。

2·PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.

PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。

3·For maximum exceed noise ratio generated, circuit structure to match the equivalent circuit diagram of the solid-state noise diode in avalanche breakdown state has been designed.

根据固态噪声二极管在雪崩击穿状态的等效电路，设计出与之匹配的电路结构，以实现超噪比的最大输出。

4·The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel .

模拟分析表明 ，采用该结构 ，器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ，器件的大电流特性和频率特性也有所改进 。

5·In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results.

本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型，理论和实验结果吻合。

6·The edge pre-breakdown of planar-type avalanche photodiode (APD) is resulted from the intense electric field at the junction bend.

平面型雪崩光电二极管(APD)在结弯曲处具有高的电场，导致在结边缘的提前击穿。