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1·The drawing of single crystal silicon in a closed thermal system is described.

本文介绍采用密闭热系统拉晶工艺拉制硅单晶的情况。

2·Impact Analysis of Gaussian Beam on Measurement of Single Crystal Silicon Sphere Diameter.

高斯光束对标准硅球直径测量的影响分析。

3·In recent years, nitrogen behavior in single crystal silicon has been intensively studied.

近年来，硅中氮的行为被广泛深入地研究。

4·This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

5·As for the living technology and condition, in view of capability, single crystal silicon is the ideal material for solar cell.

在现有工艺和条件下，从电池性能上讲，单晶硅是制造太阳电池的比较理想的材料。

6·A layer of europium oxide red light luminescent thin film is deposited on one side surface of a single crystal silicon substrate.

在单晶硅衬底的一个侧面沉积有一层氧化铕红光发光薄膜。

7·Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.

采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。

8·A method for manufacturing an ink-jet print head including: preparing a single crystal silicon wafer having a (110) crystal plane orientation, as a substrate;

一种制造喷墨打印头的方法，包括：准备具有（110）晶面取向的单 晶硅晶片作为基板；

9·It is showed that the surface roughness is mainly related with the average grain size and feed per wheel revolution for the brittle materials such as single crystal silicon.

研究结果表明，对于微晶玻璃等脆性材料，其表面粗糙度主要与砂轮的平均磨粒尺寸、砂轮速度、进给量及磨削深度等因素有关。

10·An experiment of single crystal silicon EDM have been carried out in this paper. Experimental results show that EDM is a effective machining method to single crystal silicon.

对单晶硅材料进行电火花加工工艺试验研究的结果表明，在一定的条件下，电火花加工工艺可成为单晶硅材料的一种较有效的加工方法。

单晶硅

1·As for the living technology and condition, in view of capability, single crystal silicon is the ideal material for solar cell.

在现有工艺和条件下，从电池性能上讲，单晶硅是制造太阳电池的比较理想的材料。

2·This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

3·A layer of europium oxide red light luminescent thin film is deposited on one side surface of a single crystal silicon substrate.

在单晶硅衬底的一个侧面沉积有一层氧化铕红光发光薄膜。