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1·The insulating layer is positioned on a first surface of the silicon substrate.

该绝缘层位于该硅基材的第一表面。

2·The silicon substrate also can be doped with proper carbon, nitrogen or oxygen, etc.

硅衬底中还可以掺入适量碳、氮或氧等。

3·These Q values are limited by the conductor resistance and eddy current loss in the silicon substrate.

这些Q值受到导体电阻和硅衬底的涡流损耗的限制。

4·For example, as shown in FIG. 8a, an oxide layer 810 optionally is patterned on a silicon substrate 820.

例如，如图8a所示，氧化层810选择性地在硅衬底820上形成图案。

5·In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate.

此外，缓冲层可以减少晶体管之间的设备和硅衬底平行的传导问题。

6·The electric element is positioned inside the silicon substrate and is exposed on a second surface of the silicon substrate.

该电性元件位于该硅基材内，且显露于该硅基材的第二表面。

7·It combines an Au microelectrodes array (AuMEA) with two light-addressable potentiometric sensors (LAPS) on a silicon substrate.

系统由一个电化学微电极阵列和两个光寻址电位传感器组成。

8·A layer of europium oxide red light luminescent thin film is deposited on one side surface of a single crystal silicon substrate.

在单晶硅衬底的一个侧面沉积有一层氧化铕红光发光薄膜。

9·The method is as follows: the surface of a silicon substrate adopts the three-layer metal wiring of metal 1, metal 2 and metal 3;

所述 方法是：在硅基板的表面采用金属1、金属2和金属3三层金属布线；

10·Deposition of metallic nickel on silicon substrate by laser-enhanced electroless plating technique is reported for the first time.

利用激光诱导化学镀技术，首次在硅片上沉积出金属镍。