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1·The gear velocity sensor made up of a InSn-In eutectic film magnetoresistor(MR) is studied.

对锑化铟-铟共晶薄膜磁阻元件的齿轮转速传感器电路进行了研究。

2·The research is based on properties of magnetoresistor, whose resistance varies with the angle position in the magnetic field.

对磁敏电阻的阻值随其在磁场中的角度位置变化而改变这一特性进行了实验研究。