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1·The device could be integrated monolithically and planarly with GaAs FET.

这种器件可与FET实现平面集成。

2·GaAs IC CAD system which developed on SUN workstation is introduced in this paper.

介绍了一个在SUN工作站上自主开发的砷化镓集成电路CAD系统。

3·Ideal for use for correcting gain shift from temperature fluctuations of GaAs amplifiers.

理想用于纠正从中砷化镓放大器的使用温度波动变化。

4·A multi mode interference wavelength division multiplexer in GaAs has been studied in this paper.

本文研究了一种多模干涉型光波分复用器。

5·An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.

报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。

6·To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.

为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。

7·The design technology and developed results for C band GaAs MMIC 6 bit digital phase shifter are described.

叙述了一种采用单片集成方式实现的C波段6位数字移相器的设计技术和研制结果。

8·The feedback circuit employs a GaAs photoconductive switch, which has simple structure and reliable performance.

光电反馈线路采用普通的砷化镓光电导开关，具有结构简单、性能可靠的优点。

9·In this paper, the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.

本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。

10·Being a core part of laser beam system, the output coupling mirror are often made of ZnSe, Ge, GaAs as base materials.

输出耦合镜作为激光光路系统的核心部件，通常由硒化锌、锗、砷化镓等基材制成。